http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6430268-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205 |
| filingDate | 1987-07-24^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8cb60ef3179780d6599fdca72a10275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_098e9556ceac9631ac5f6ee698a1e03f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a3b8e46baa14440fcbb15e35ab22b07 |
| publicationDate | 1989-02-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S6430268-A |
| titleOfInvention | Bipolar transistor and manufacture thereof |
| abstract | PURPOSE:To get rid of the stray capacitance in an outer base region by a method wherein ions are implanted just under an outer base region of a lead-out section of a base electrode adjacent to both sides of an emitter layer so as to penetrate from a collector layer through a collector contact layer thereunder and further reach a semi-insulating substrate. CONSTITUTION:A collector layer 32, a collector layer 33, a base layer 34, an emitter layer 35, and an emitter contact layer 36 are successively formed on a semi-insulating gallium arsenide substrate 31 through the film growth, and oxygen ions are implanted into the peripheral region so as to reach the collector layer 33 for the formation of an implanted layer 71. Next, a dummy emitter 75 is formed into a narrow and long form to bestride the implanted layer 71 through the use of a silicon oxide film, oxygen ions are deeply implanted to penetrate through the base layer 34 and reach to the substrate 31 from the collector layer 33 for the formation of an oxygen ion implanted layer 72. Then, a pattern formation of a region where a collector electrode is formed is performed. In addition, a hydrogen ion implanted layer 73 is formed to isolate the element for the formation of a base electrode 84. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5523894-A |
| priorityDate | 1987-07-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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