http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2006033282-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-135 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate | 2005-09-15^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-05-15^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2006033282-A1 |
| titleOfInvention | THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR ELEMENT SHEET, AND METHOD FOR PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR ELEMENT SHEET |
| abstract | Provided a high-performance, inexpensive thin film transistor and thin film transistor element sheet and a thin film transistor element sheet, and an electric circuit having those thin film transistors without performance variation, and a complicated, expensive, low-productivity vacuum system, etc. Providing a simple and efficient manufacturing method without using photolithography. Forming an insulating region having electrode material repellent properties on a support using an electrostatic suction ink jet apparatus having a nozzle inner diameter of 30 μm or less in a thin film transistor having at least a gate electrode, a semiconductor layer, a source electrode, and a drain electrode; Next, a flowable electrode material is supplied to the insulating region, and the flowable electrode material is divided at the insulating region, whereby the source electrode and the drain electrode are formed. A thin film transistor manufactured. |
| priorityDate | 2004-09-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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