http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2008084673-A1

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filingDate 2007-12-25^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2010-04-30^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2008084673-A1
titleOfInvention Semiconductor device and manufacturing method thereof
abstract In semiconductor devices where mounting components such as semiconductor packages and electronic elements are soldered to printed circuit boards using lead-free solder, microvoids in the solder joints that occur during heat aging are suppressed, and the impact rupture resistance of the solder joints is improved. Provided is a semiconductor device. In the assembly process of electronic parts such as semiconductor devices, when soldering a mounting member to a printed circuit board using lead-free solder, the printed circuit board is immersed in an organic acid-containing liquid heated to 60 ° C. or higher and 300 ° C. or lower. An oxide layer on the surface of the copper land is removed to a predetermined thickness or less to activate the cleaning, and an anti-oxidation protective film by the organic acid is formed on the surface of the cleaned copper land, and the printed circuit board and the predetermined A lead-free solder layer in which oxygen is present below a predetermined concentration is brought into close contact with the surface of the copper land, the solder interface, and the solder layer. The mounting member is soldered via the lead-free solder layer.
priorityDate 2007-01-09^^<http://www.w3.org/2001/XMLSchema#date>
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