http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2016170770-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1292 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-611 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-84 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2016-04-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-02-15^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2016170770-A1 |
| titleOfInvention | THIN FILM TRANSISTOR ARRAY FORMING SUBSTRATE, IMAGE DISPLAY DEVICE SUBSTRATE, AND THIN FILM TRANSISTOR ARRAY FORMING SUBSTRATE MANUFACTURING METHOD |
| abstract | Provided are a thin film transistor array forming substrate capable of satisfactorily patterning a semiconductor layer and a protective layer, a manufacturing method thereof, and a substrate for an image display device using the thin film transistor array forming substrate. The thin film transistor array formation substrate includes a gate electrode, a gate insulator layer, a source electrode, a pixel electrode connected to the drain electrode and the drain electrode, a semiconductor layer, and a protective layer stacked in this order on the substrate. The source wiring also serves as a periodic cutout in the extending direction, and the cutout of the source wiring is formed at a position overlapping the gate electrode, and the portion with the cutout becomes a thin source wiring. The part having no notch is a thick source wiring having a width larger than that of the thin source wiring, at least the thick source wiring has an opening, and the semiconductor layer is a stripe that is long in the direction in which the source wiring extends, and the source electrode and drain The protective layer covers the entire semiconductor layer. |
| priorityDate | 2015-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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