| abstract |
Reduce the wiring resistance of the active matrix substrate. The active matrix substrate is disposed on the substrate 31, a plurality of gate lines as first wirings extending in the first direction, and a plurality of active matrix substrates disposed on the substrate 31 and extending in a second direction different from the first direction. The transistor includes a source line Si that is the second wiring, a transistor 2 that is arranged corresponding to each intersection of the gate line and the source line, and is connected to the gate line and the source line, and an insulating layer. At least one of the gate line and the source line Si is connected to the electrode of the transistor via a contact hole of the insulating layer, and is thicker than the electrode of the transistor connected to each other via the contact hole of the insulating layer It is formed of at least one of a material having a small thickness and resistivity. |