| abstract |
A rewritable semiconductor device using a non-volatile switch with excellent reliability and low area and low power consumption is provided that has a rectifying element that prevents erroneous writing and malfunction and substitutes a select transistor, and is equipped with the rectifying element , A laminated structure of the first electrode 11, the first buffer layer 14, the rectifying layer 13, the second buffer layer 15, and the second electrode 12, the rectifying layer 13 having a high nitrogen content (50 atomic% or more) A silicon layer 16 and a second silicon nitride layer 17 having a nitrogen content lower than that of the first silicon nitride layer 16 (50 atomic% or less) are used as the first and second buffer layers (14, 15). It is characterized in that the silicon nitride layer 17 is in contact and the first silicon nitride layer 16 is sandwiched between the second silicon nitride layers 17. |