| abstract |
PROBLEM TO BE SOLVED: To reduce the dislocation density in a group 13 element nitride crystal layer made of gallium nitride, aluminum nitride, indium nitride or a mixed crystal of group 13 element nitrides and having a top surface and a bottom surface, Provide a microstructure capable of reducing variations in characteristics over the entire length. SOLUTION: When an upper surface 13a of a group 13 element nitride crystal layer 13 is observed by cathodoluminescence, it has a linear high-brightness light emitting part 5 and a low-brightness light emitting region 6 adjacent to the high-brightness light emitting part 5. . The half width of (0002) plane reflection of the X-ray rocking curve on the upper surface 13a is 3000 seconds or less and 20 seconds or more. [Selection diagram] |