http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-0165423-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate | 1995-07-24^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 1998-12-15^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23f844b904473ccdd70c783396a8fd11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_967fedc76319e2c09e7dd00179c2edf6 |
| publicationDate | 1998-12-15^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-0165423-B1 |
| titleOfInvention | Connection structure of semiconductor device and manufacturing method thereof |
| abstract | Disclosed are an interconnect structure of a semiconductor device capable of connecting impurity regions of different types while suppressing an increase in contact resistance, and a method of manufacturing the same. A first impurity diffusion region formed in a first portion on a semiconductor substrate, a second impurity diffusion region formed in a second portion on a semiconductor substrate, and a first impurity diffusion region and a second impurity diffusion region on the semiconductor substrate. An interlayer insulating film having a contact hole exposing the light emitting layer and an impurity that is the same as an impurity contained in the first impurity diffusion region and the second impurity diffusion region, respectively, on the first impurity diffusion region and the second impurity diffusion region formed on the interlayer insulation layer It provides a semiconductor device comprising a second conductive film comprising a. According to the present invention, in electrically connecting different diffusion regions with a polyside film, a poly only is formed on the inner wall of the contact hole where n + diffusion region and p + diffusion region are exposed and only on the surfaces of n + diffusion region and p + diffusion region. It is possible to prevent the contact resistance from increasing by forming a silicon film and forming a polyside film in the remaining wiring region. |
| priorityDate | 1995-07-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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