http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100384850-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate | 2000-12-14^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-05-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2003-05-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100384850-B1 |
| titleOfInvention | Method for forming Ta2O5 dielectric layer |
| abstract | The present invention is to provide a tantalum oxide dielectric film forming method that can improve the film quality and electrical properties by forming a tantalum oxide dielectric film using an atomic layer deposition method and an in-situ N 2 O plasma treatment, for this purpose In the method for forming a silver tantalum oxide dielectric film, a tantalum oxylate source gas in a gaseous state is flowed in a chamber on a substrate on which a predetermined process is completed, and a tantalum oxide film is deposited on the substrate and purged, and then N 2 O gas is in situ A monolayer tantalum oxide film was formed by one cycle consisting of flowing the chamber, exciting the plasma, plasma treating the tantalum oxide film, and purging, and repeating the cycle several times to form a tantalum oxide dielectric film having a desired thickness. Doing; And annealing the tantalum oxide dielectric film to form a crystallized tantalum oxide dielectric film. |
| priorityDate | 2000-12-14^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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