http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100546209-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2003-07-09^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-01-24^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-01-24^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100546209-B1 |
| titleOfInvention | Copper wiring formation method of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a copper wiring of a semiconductor device, wherein after forming a copper wiring in a damascene pattern, before forming a copper diffusion preventing insulating film on the entire structure, a specific metal element is formed on the surface of the copper wiring and the surrounding insulating film. Doping the surface to form a metal element doping layer, and then forming a copper diffusion preventing insulating film and a low dielectric constant interlayer insulating film, and the specific metal element doped by the heat treatment process reacts with other elements around, thereby forming copper wiring and copper diffusion Since the copper alloy layer and the metal oxide layer are formed by lamination at the insulating film interface, and the metal oxide layer is formed at the insulating film and the copper diffusion preventing insulating film interface, the interface bonding between the copper diffusion preventing insulating film and the copper wiring and the insulating film underneath thereof is increased. The reliability of the wiring can be improved.n n n n Copper wiring, copper diffusion prevention insulating film, alloy layer, metal oxide layer |
| priorityDate | 2003-07-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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