http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100588892-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-46 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate | 2004-10-13^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-06-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-06-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100588892-B1 |
| titleOfInvention | Pad oxidation prevention method of semiconductor device |
| abstract | The present invention relates to a method for preventing pad oxidation of a semiconductor device, and more particularly, to a method for preventing pad oxidation of a semiconductor device capable of preventing a test defect by preventing oxidation of a pad surface made of aluminum.n n n The object of the present invention is to expose the aluminum film in the region where the pad is to be formed, and then to NH 3 or N 2 plasma treatment in-situ to form a nitride film on the surface of the aluminum film. Achieved by an oxidation prevention method.n n n Therefore, the method for preventing pad oxidation of the semiconductor device of the present invention can prevent test failure and contact failure due to oxidation of aluminum and prevent damage to the aluminum pad by the test probe.n n n n Pad anti-oxidation, aluminum, plasma |
| priorityDate | 2004-10-13^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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