http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100593151-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0058 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0008 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 |
| filingDate | 2004-06-25^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-06-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-06-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100593151-B1 |
| titleOfInvention | Nitride semiconductor light emitting device and manufacturing method |
| abstract | A nitride semiconductor light emitting device according to the present invention, a substrate; A buffer layer formed on the substrate; An In-doped GaN layer doped with indium formed on the buffer layer; A first electrode layer formed on the in-doped GaN layer; An In x Ga 1-x N layer formed on the first electrode layer; An active layer emitting light, formed on the In x Ga 1-x N layer; A first p-GaN layer formed over the active layer; A second electrode layer formed on the first p-GaN layer; A second p-GaN layer formed to partially protrude on the second electrode layer; A third electrode layer formed on the second p-GaN layer; It includes.n n n Herein, the second and third electrode layers may include an n-In x Ga 1-x N layer having a super grading structure in which indium content is sequentially changed, an InGaN / InGaN super lattice structure layer, or an InGaN / AlInGaN super layer. It is formed of a super lattice structure layer.n n n In addition, the second and third electrode layer is further provided with a transparent electrode to which a bias voltage is applied, the transparent electrode is formed of a transmissive metal oxide or a transmissive resistive metal, Au containing ITO, ZnO, IrOx, RuOx, NiO or Ni metal Selected from the alloy layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101393914-B1 |
| priorityDate | 2004-06-25^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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