http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100690930-B1

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publicationDate 2007-03-09^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100690930-B1
titleOfInvention High resolution pattern formation method with desired pattern thickness or high aspect ratio using deep removal
abstract In the pattern forming method according to the present invention, a single layer or a multilayer sacrificial film made of a semi-solid or solid material is pre-processed on a substrate by using a focused energy beam such as a laser after attaching a portion or a front surface onto a substrate. After that, the functional material is filled into the pre-processed portion by inkjet or the like and dried, and finally, the desired pattern can be formed by removing the sacrificial film. The substrate on which the prepattern is formed according to the present invention can minimize waste of functional materials and can obtain a high resolution pattern having a high aspect ratio (pattern thickness / pattern linewidth). In particular, by incorporating the high resolution pattern of a focused energy beam such as a laser into a high resolution pattern which is difficult to obtain by the inkjet method alone, which is an effective means for transferring functional materials and utilization of materials, a high resolution pattern can be produced with high process efficiency. The desired final pattern thickness can be obtained by using a sacrificial film.
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