| abstract |
There is a need for a thin film transistor circuit device and a method of manufacturing the same, wherein the lower layer includes an aluminum alloy and the upper layer includes a wiring made of molybdenum alloy, and corrosion of the molybdenum alloy does not easily proceed in the air. According to the present invention, a portion of the wiring covered with an insulating film for connecting the thin film transistors in the main circuit region formed on the center of the substrate is exposed to the protection circuit region formed on the outer peripheral portion of the substrate, and the terminal is exposed on the exposed surface. In a thin film transistor circuit device including a terminal formed of an electrode metal, the uppermost surface of the wiring is a molybdenum alloy containing niobium.n n n n Thin film transistor, liquid crystal display |