| abstract |
The present invention provides a bonding wire for a semiconductor, wherein the core wire and the outer periphery are composed of a conductive metal having the same element as a main component and an alloy thereof, and between the core wire and the outer periphery, the core wire and the periphery are made of elements that constitute the core wire and the periphery. A core wire made of a bonding wire for a semiconductor having a diffusion layer and / or an intermetallic compound layer, a conductive first metal or an alloy containing the first metal as a main component thereof, and a second conductive wire having a different conductivity from the first metal of the core wire. A semiconductor bonding wire having a diffusion layer and / or an intermetallic compound between an outer circumferential portion made of an alloy containing a metal or a second metal as its main component, and the core wire and the outer circumferential portion, and a manufacturing method thereof. n n Bonding wire, intermetallic compound layer, core wire, diffusion layer, resin sealing, ultrasonic bonding |