http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100721472-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30107 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F3-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04B1-38 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04B1-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 |
| filingDate | 2007-02-01^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-05-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-05-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100721472-B1 |
| titleOfInvention | Semiconductor integrated circuit devices |
| abstract | The present invention provides a semiconductor integrated circuit device for wireless communication formed on a semiconductor chip, wherein the first signal to be amplified has an amplifier supplied from the outside of the semiconductor chip, and receives an output signal of the amplifier and converts it to a frequency lower than the output signal. And a receiving unit having a frequency conversion circuit, the main surface of the semiconductor chip being provided with a plurality of electrode terminals along the sides of the main surface, the amplifier comprising: a control electrode to which the first signal is to be supplied; And a transistor including a first electrode outputting a signal according to a signal supplied to the control electrode, and a second electrode to which a voltage is applied, wherein the control electrode, the first electrode, and the second electrode of the transistor are provided. Are respectively connected to the electrode terminals via relatively short wires, and a first electrode terminal of the electrode terminals is connected to the electrode terminals. Connected between the first electrode of a transistor, between a second electrode terminal of the electrode terminals and the second electrode of the transistor, and between a third electrode terminal of the electrode terminals and the control electrode of the transistor, respectively. A semiconductor integrated circuit device is provided that does not have any other wiring crossing the wirings.n n n n Dual band, low-noise amplifier (LNA), time division multiple access (TDMA) system, reduced wiring capacity, parasitic inductance |
| priorityDate | 2000-02-21^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Showing number of triples: 1 to 37 of 37.