http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100824621-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a17dc10b5bd6e5f0df2ce1aab3bbdce |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76859 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2006-11-27^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-04-24^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc3f2173be15d91fc9cb654cb942d121 |
| publicationDate | 2008-04-24^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100824621-B1 |
| titleOfInvention | Metal wiring formation method of semiconductor device |
| abstract | According to the present invention, an Al wiring stack structure having a plurality of films is formed by sequentially depositing an Al wiring and a Ti film on an interlayer insulating film on a semiconductor substrate having a predetermined lower structure, and the substrate including the Al wiring stack structure. Implanting reactive ions into an interface between the Al wiring and the Ti film by ion implantation, and reacting the injected reaction ions with Al or the Ti film of the Al wiring Forming an Al growth barrier layer on an upper interface, and dry etching the Al interconnection stack structure including the Al growth barrier layer to form a plurality of Al interconnection layer structure patterns on the interlayer insulating layer. A metal wiring formation method is related. |
| priorityDate | 2006-11-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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