| abstract |
The present invention relates to a method of forming a low resistance metal wiring, and more particularly, to a method of forming a copper wiring.n n n In the method for forming a copper wiring according to the present invention, a thin thin film is made of silver before the deposition of copper in an electroplating method, and then copper is deposited on top of the silver thin film.n n n In this case, the thin silver thin film may be formed between the copper layer and the diffusion barrier.n n n As described above, when a thin silver thin film is formed below the copper wiring, the diffusion of copper can be prevented and the resistance value of the copper wiring increased by the diffusion barrier can be lowered. |