http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100989567-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate | 2008-05-15^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-10-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-10-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100989567-B1 |
| titleOfInvention | Pattern Formation Method |
| abstract | (i) applying a resist composition containing a resin that increases in polarity by the action of an acid, wherein the solubility in the positive tone developer is increased and the solubility in the negative tone developer is decreased by irradiation with actinic light or radiation, (ii) exposure process, (iii) development using a negative tone developer to form a resist pattern, and (iv) a resin and a crosslinking layer constituting the resist pattern by applying a crosslinking layer forming material to the resist pattern. And forming a crosslinking layer by crosslinking the forming material. According to the present invention, a method of forming a pattern having effectively reduced the size of a trench pattern or a hole pattern without generating a scum is provided.n n n n Pattern Formation Method |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170048505-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101966671-B1 |
| priorityDate | 2007-05-15^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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