| abstract |
The memory element 3 provided in the memory device 21 in a matrix form has a resistance change element whose electrical resistance value changes due to the application of positive or negative polarity polarity, and which retains the electrical resistance value after the change ( 1) and a current suppression element 2 for suppressing a current flowing in the application of the electric pulse to the resistance change element, wherein the current suppression element comprises: a first electrode, a second electrode, and the first; A current suppression layer is provided between the electrode and the second electrode, and the current suppression layer is composed of SiN x (x is a positive real number). |