http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101229277-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 2006-10-12^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-02-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-02-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101229277-B1 |
| titleOfInvention | Method for manufacturing thin film transistor substrate |
| abstract | A method of manufacturing a thin film transistor substrate is disclosed. A data metal film in which a first metal layer, a second metal layer, and a third metal layer are successively stacked on the active layer is formed. Thereafter, a first photoresist pattern having a relatively thin thickness is formed on the data metal film as compared with other regions. Thereafter, the third metal layer is dry-etched using the first photoresist pattern. Thereafter, the second metal layer and the first metal layer are dry-etched simultaneously using the first photoresist pattern. Thereafter, the active layer is dry-etched using the first photoresist pattern. Thereafter, the first photoresist pattern is etched to form a second photoresist pattern from which the channel formation region is removed. Thereafter, the channel formation region of the data metal film is dry-etched using the second photoresist pattern to form a source electrode connected to the data line and a drain electrode spaced apart from the source electrode. As such, by performing both the primary etching process for forming the data line and the secondary etching process for forming the channel in the dry etching process, the problem caused by the wet etching may be solved and the manufacturing process may be simplified. |
| priorityDate | 2006-10-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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