| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 |
| filingDate |
2006-10-31^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-05-15^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2013-05-15^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101262226-B1 |
| titleOfInvention |
Manufacturing method of semiconductor light emitting device |
| abstract |
The disclosed method for manufacturing a semiconductor light emitting device includes forming a light emitting structure by sequentially stacking a first material layer, an active layer, and a second material layer on a substrate, and excluding a cleaving region for forming at least a cleaved surface of the bottom surface of the substrate. Forming an unevenness in the region, and forming an n-electrode in the unevenness region. |
| priorityDate |
2006-10-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |