http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101281429-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02N2-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N30-01 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02N2-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-187 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-22 |
| filingDate | 2010-07-29^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-07-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-07-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101281429-B1 |
| titleOfInvention | Method of manufacturing piezoelectric element |
| abstract | By plasma etching, the manufacturing method of the piezoelectric element which processes a ferroelectric film to a favorable shape is provided. The metal mask which consists of a metal thin film which is hard to be etched with oxygen gas is arrange | positioned on the process object by which the lower electrode layer and the ferroelectric film were laminated | stacked on this board | substrate in this order. The etching gas containing the oxygen gas and the mixed gas of the reaction gas containing fluorine in the chemical structure is plasma-formed, the metal mask is brought into contact with the object to be treated, and an alternating voltage is applied to the electrode under the object to treat ions in the plasma. Is injected to anisotropically etch the ferroelectric film. Etching for a long time is possible, and no etching product adheres to the etched side surface, whereby a piezoelectric element having a ferroelectric film of good shape is obtained. |
| priorityDate | 2009-08-06^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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