http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101285049-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-320275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10 |
| filingDate | 2010-11-16^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-07-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-07-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101285049-B1 |
| titleOfInvention | Method of manufacturing group III nitride semiconductor laser device, and group III nitride semiconductor laser device |
| abstract | Provided is a group III nitride semiconductor laser device having a laser resonator that enables low-threshold current on the semipolar plane of the support gas in which the c-axis of the hexagonal group III nitride is inclined in the m-axis direction. In the laser structure 13, the 1st surface 13a is the surface opposite to the 2nd surface 13b, and the 1st and 2nd cut | disconnected surfaces 27 and 29 are the edge 13c of the 1st surface 13a. ) Extends to the edge 13d of the second face 13b. For example, one end of the first cut end 27 has a scribe mark SM1 extending from the edge 13c to the edge 13d, and the scribe mark SM1 and the like have an edge 13d from the edge 13c. It has a concave shape extending to. The cut edges 27 and 29 are not formed by dry etching and are different from the conventional cleaved surfaces such as the c surface, the m surface, or the a surface. Light emission of band transitions that enables low threshold currents can be used. |
| priorityDate | 2010-01-18^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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