http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101292435-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-265 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B15-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-00 |
| filingDate | 2005-04-08^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-07-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-07-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101292435-B1 |
| titleOfInvention | Growth method of Si-Si semiconductor material and device on substrate |
| abstract | The present invention relates to a method of growing a Si-Ge material on Si (100) with Ge concentration content (Ge> 50 at.%) And accurate stoichiometric SiGe, SiGe 2 , SiGe 3 and SiGe 4 . The Need for Thick Buffer Layers and Lift-Off Techniques with Composition Gradients Using Novel Hydrides with Si-Ge Direct Bonds Derived from Types of Compounds (H 3 Ge) x SiH 4-x (x = 1 to 4) Grow a uniform, relayed, highly flat surface film with low defect density at an unprecedented low temperature of about 300 ° C to 450 ° C with complete exclusion of From about 500 ° C. to 700 ° C., SiGe x quantum dots were grown having narrow size distribution, defect-free microstructures and very homogeneous elemental content at the atomic level. This method incorporates the entire Si / Ge backbone of the gaseous precursor into the film to provide precise control of morphology, composition, structure and deformation. The grown material has the necessary morphology and microstructure features for applications in high frequency electronic and optical systems, as well as templates and buffer layers for the formation of commercially available devices based on high mobility Si and Ge channels.n n n n Si-Ge materials, essential morphologies, microstructure features, templates and buffer layers |
| priorityDate | 2004-09-14^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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