http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101326134-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-133 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2007-02-07^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-11-06^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-11-06^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101326134-B1 |
| titleOfInvention | Thin film transistor display panel and manufacturing method thereof |
| abstract | The present invention comprises the steps of forming a gate electrode comprising a metal capable of forming a silicide by combining with silicon on a substrate, supplying a silicon-containing gas at a temperature of 280 degrees Celsius or less on the gate electrode to form a gate insulating film, A method of manufacturing a thin film transistor array panel includes forming a semiconductor on the gate insulating layer, forming a data line and a drain electrode on the semiconductor, and forming a pixel electrode connected to the drain electrode.n n n n Thin film transistor, gate insulating film, gate line, copper, resistor |
| priorityDate | 2007-02-07^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Showing number of triples: 1 to 32 of 32.