http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101333521-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2007-04-13^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-11-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2013-11-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101333521-B1 |
| titleOfInvention | Plasma processing equipment |
| abstract | The present invention relates to a plasma processing apparatus for removing various foreign substances formed on the back surface of a substrate such as a wafer on which a device having a predetermined thin film pattern is formed, comprising: a first electrode to which a first gas is injected; A substrate support for supporting a substrate spaced apart from the first electrode; And a third gas spaced apart from the substrate support, in which power is applied and a second gas is injected to form a plasma between the substrate supported on the substrate support, and a third gas constraining the second gas is injected. Including the two electrodes, it is possible to efficiently protect the surface is not required for etching on the substrate compared to the conventional dry etching to increase the yield of the final product and prevent the occurrence of defects.n n n n Etching, Substrate Back, Wafer, Plasma Treatment |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101586237-B1 |
| priorityDate | 2007-04-13^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Showing number of triples: 1 to 20 of 20.