http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101410436-B1

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filingDate 2011-04-07^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-06-20^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2014-06-20^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101410436-B1
titleOfInvention Process for producing epitaxial single-crystal silicon carbide substrate and epitaxial single-crystal silicon carbide substrate obtained by the process
abstract A method for manufacturing an epitaxial silicon carbide single crystal substrate in which a silicon carbide film is epitaxially grown on a silicon carbide single crystal substrate by chemical vapor deposition. In the crystal growth process of this method, the growth temperature is changed up and down between the lower set temperature T 0 and the higher set temperature T 2 with respect to the growth temperature T 1 in the crystal growth main process which occupies the main time of the epitaxial growth And a crystal growing step for carrying out a temperature changing operation for causing the temperature of the epitaxial silicon carbide single crystal substrate to change.
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