http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101477661-B1

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filingDate 2008-07-17^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-12-31^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2014-12-31^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101477661-B1
titleOfInvention Tungsten patterns and their pattern formation through tungsten re-growth
abstract A tungsten plug without seam through tungsten regrowth and a method of forming a semiconductor device utilizing the same.n n n A method of forming a seam-free tungsten plug through tungsten re-growth as described above includes forming a tungsten plug layer forming a contact hole in a first insulating layer, regrowing the tungsten plug layer by plasma oxidation or RTA (rapid thermal annealing) A semiconductor structure having wires or electrodes on the re-grown tungsten plug is formed.n n n A tungsten plug without a seam in a fine hole can be used as a path connecting the diode and the lower electrode in forming a phase change memory device, thereby lowering the interfacial resistance to form a soft phase-free phase change memory.
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