http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101494122-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-42 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 |
| filingDate | 2012-04-20^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-02-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-02-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101494122-B1 |
| titleOfInvention | Epitaxial silicon carbide single-crystal substrate and process for producing same |
| abstract | Provided is an epitaxial silicon carbide single crystal substrate having a silicon carbide single crystal thin film having a small number of stacking defects and a high quality on a silicon carbide single crystal substrate and a method for manufacturing the same. Cm < 2 > / cm < 2 > in total, on the silicon carbide single crystal substrate having an off angle of 4 DEG or less, Wherein the silicon-based material gas used for forming the epitaxial layer is chlorosilane, the carbon-based material gas is a hydrocarbon gas, and the silicon-based material gas is at least one of 1600 DEG C and 1700 DEG C The epitaxial layer is formed with a C / Si ratio of not less than 0.5 and not more than 1.0 and a growth rate of not less than 1 탆 / hour and not more than 3 탆 / hour under the growth temperature of the epitaxial silicon carbide single crystal substrate. |
| priorityDate | 2011-04-21^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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