http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101532456-B1

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
filingDate 2008-11-13^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-06-29^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2015-06-29^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101532456-B1
titleOfInvention Bevel plasma treatment to enhance wet edge clean
abstract The various embodiments described herein provide improved mechanisms for removal of unwanted deposits on the beveled edge to improve process yield. Embodiments provide devices and methods for treating a beveled edge of a copper-plated substrate to convert the copper at the beveled edge to a copper compound that can be wet etched by the fluid at a high etch rate compared to copper. In one embodiment, wet etching of a copper compound with a high selectivity relative to copper allows the removal of nonvolatile copper at the substrate bevel edge in a wet etch processing chamber. Plasma processing at the beveled edge allows copper to be removed at the beveled edge with precise spatial control of less than about 2 mm, such as about 0.5 mm or about 0.25 mm, to about 1 mm, to the shortest edge of the substrate. In addition, the above-described devices and methods for bevel edge copper removal do not have the problems that the copper etchant fluid is splashed over the device regions to cause defects and thinning of the copper films. Therefore, the device yield can be greatly improved.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020231612-A1
priorityDate 2007-11-21^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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