http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101533391-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 2008-08-06^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-07-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-07-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101533391-B1 |
| titleOfInvention | A thin film transistor substrate and a fabricating method of the same |
| abstract | An oxide semiconductor thin film transistor substrate with improved process efficiency and improved reliability and a method of manufacturing the same are provided. The oxide semiconductor thin film transistor is formed on an insulating substrate and includes a gate line including a gate electrode, a data line intersecting the gate line and including a drain electrode connection portion, an oxide semiconductor active layer pattern formed around the gate electrode, And a passivation layer formed on the oxide semiconductor active layer pattern and having a first opening exposing the drain electrode connection portion and a second opening exposing the oxide semiconductor active layer pattern, a passivation layer formed on the first opening and the second opening, And a drain electrode electrically connecting the oxide semiconductor active layer pattern and the drain electrode connection portion. n n Oxide semiconductor, thin film transistor, drain electrode connection pad, etch stopper pattern |
| priorityDate | 2008-08-06^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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