abstract |
Methods, systems, and systems are provided for a selection device that can include a semiconductive laminate of at least one semiconductive material formed on a first electrode, wherein the semiconductive laminate has a thickness of less than about 700 angstroms Lt; / RTI > Each of the at least one semiconductive material may have an associated band gap of about 4 electron volts (eV) or less, and the second electrode may be formed on the semiconductive laminate. |