http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101574387-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
| filingDate | 2013-09-02^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-12-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-12-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101574387-B1 |
| titleOfInvention | Nitride semiconductor device, nitride semiconductor wafer, and method for forming nitride semiconductor layer |
| abstract | According to one embodiment, the nitride semiconductor device comprises a laminate and a functional layer. The stacked body includes an AlGaN layer of Al x Ga 1 - x N (0 <x? 1), a first Si containing layer, a first GaN layer, a second Si containing layer, and a second GaN layer. The first Si-containing layer contacts the upper surface of the AlGaN layer. The first Si-containing layer contains Si at a concentration of 7 × 10 19 / cm 3 to 4 × 10 20 / cm 3 . The first GaN layer is disposed over the first Si-containing layer. The first GaN layer includes a convex portion having an inclined surface inclined with respect to the upper surface. And the second Si-containing layer is provided on the first GaN layer. The second Si-containing layer contains Si. The second GaN layer is provided over the second Si-containing layer. The functional layer is provided on the laminate. The functional layer includes a nitride semiconductor. |
| priorityDate | 2012-11-21^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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