http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101593390-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-26 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2009-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-02-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-02-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101593390-B1 |
| titleOfInvention | Blank mask and photomask and method of manufacturing the same |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a blank mask, a photomask, and a method of manufacturing the same. More particularly, the present invention relates to a blank mask, a photomask, And a rapid thermal annealing process is carried out on all or at least one thin film to have a concentration of sulfuric acid and ammonium ions of not more than 100 ppbv, a flatness of not more than 1.0 탆 and a density of not less than 1.0 g / cm 3 at the surface of the uppermost layer of the blank mask Characterized in that a resist film is applied.n n n The present invention relates to a method of forming a resist pattern having a superior shape by reducing the concentration of sulfuric acid and ammonium ions and densifying a thin film by reducing the flatness by performing a rapid thermal annealing process on a thin film of any one of a phase reversal film, It is possible to manufacture a high-quality photomask capable of manufacturing a high-quality photomask that can reduce the occurrence of scum in the lithography process.n n n n A blank mask, a photomask, a rapid thermal annealing, a chemically amplified resist |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102444967-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102503790-B1 |
| priorityDate | 2009-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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