| abstract |
Embodiments of the present invention provide a thin film transistor, a method of manufacturing the same, and a display device. The thin film transistor includes a gate electrode 502, a gate insulating layer 503, an active layer 504, ohmic contact layers 505a-1, 505a-2 and 505a-3, a source electrode 507a and a drain electrode 507b And the source electrode 507a and the drain electrode 507b are connected to the active layer 504 by the ohmic contact layers 505a-1, 505a-2, and 505a-3. The ohmic contact layers 505a-1, 505a-2, and 505a-3 are provided on the side surfaces of the active layer 504 and contact the side surfaces of the active layer 504. |