http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101690541-B1

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filingDate 2009-09-02^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-12-28^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-12-28^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101690541-B1
titleOfInvention Method for manufacturing thin film tranisistor and display device
abstract A method of manufacturing a thin film transistor having a small leakage current and a high switching characteristic is provided. n In the manufacturing method of the thin film transistor, a back channel portion is formed in the thin film transistor by etching using a resist mask, and the resist mask is removed by peeling or the like to further etch the surface layer portion of the back channel portion. This makes it possible to reduce the leak current by removing the components of the chemical solution or the residue of the resist mask used for peeling present in the surface layer portion of the back channel portion. In the case of further etching the back channel portion, it is preferable to use dry etching performed with no bias by N 2 gas or CF 4 gas. n n Thin film transistor, undoped semiconductor layer, back channel, slit etching, sulfur
priorityDate 2008-09-05^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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