http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101951136-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B30-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B30-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
filingDate 2016-03-18^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-02-21^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-02-21^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-101951136-B1
titleOfInvention Manufacturing method of silicon carbide single crystal
abstract The present invention provides a manufacturing method by a sublimation recrystallization method capable of more accurately detecting a heating state of a raw material in a crucible and producing SiC single crystal while controlling growth conditions. The method includes: converter means for converting an alternating current into a direct current so as to obtain a high-frequency current to flow through the induction heating coil; and inverter means for converting the direct current outputted from the converter means into high- (DCV / DCI) calculated from the DC voltage value (DCV) and the DC current value (DCI) converted by the converter means at the time of growth of the silicon carbide single crystal and the time- Characterized in that at least one of DCV and DCI of the converter means is adjusted on the basis of the relationship between the micropipe density formed in the silicon single crystal and the relationship between the previously obtained DC equivalent resistance value and the micropipe density.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11339497-B2
priorityDate 2015-03-24^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009227525-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9863
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419549006
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123

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