http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102010762-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate | 2019-02-20^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-08-14^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-08-14^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102010762-B1 |
| titleOfInvention | Thin Film Deposition Apparatus, Plasma Generation Apparatus, And Thin Film Deposition Method |
| abstract | The present invention provides a thin film deposition apparatus, a plasma generating apparatus, and a thin film deposition method. This thin film deposition apparatus includes a vacuum vessel. The thin film deposition apparatus uses a first gas supplied between the ground electrode and the power electrode through a first gas supply line and a power electrode disposed between the plurality of ground electrodes, the ground electrode and disposed opposite the ground electrode. A plasma region to be formed, a reaction region interacting with the plasma using a second gas supplied through the second gas supply line and penetrating the ground electrode, and a substrate holder disposed in the reaction region, the substrate holder being disposed on the substrate holder. A thin film is formed on the arranged substrate. |
| priorityDate | 2019-02-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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