| abstract |
The invention relates to an apparatus (1) for forming a reflection reduction layer on a surface (21) of a plastic substrate (20). The apparatus comprises a first sputtering apparatus 3 for depositing a base layer 22 on the surface 21 of the plastic substrate 20, a plasma source 4 and a substrate for the plasma etching treatment of the coated substrate surface 21. And a second sputtering apparatus 5 for depositing a protective layer 24 on the surface 21. The processing devices 3, 4, 5 are arranged together in a vacuum chamber 2, which has an inlet 8 for a process gas. A transfer device 10 is provided for the movement of the substrate 20 between the processing devices 3, 4, 5 in the vacuum chamber 2, which is preferably formed as a rotary table 11. The invention also relates to a method for forming the reflection reduction layer on the surface 21 of a plastic substrate 20. |