| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c63bc5ef3ae590b0603de4587961cac3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ce6b5a671c96a8b65cb01f83785cddd2 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2019-08-07^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-01-30^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1382d3d1772437c1951ac13ee32107c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4245248063901788a42576969da5392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26e1a326962bdc57952231f297d7a47c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e5d8ebddcdb87ca2e5225804e0b68e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84d59f9b5a160fe3568478f781427c32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2dc6b4d20a647d7bf77dad563f79d18e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_296d9553231bc9ad2309ecee53f52c67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b82f69f2176dcdc8ef0db44404aceb6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa2268b387ce74ff3d9c22900c351c0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_511393829560aa9b10aac476f459ef93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fca4dc9c076150ce4f263a0a6c84ee38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a60a4528030395c4b7ee67e84f2a084
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f1df994362f319518b6b2feb5e0bae7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90aa81a81dea76399d85bd98cbe5eb9a |
| publicationDate |
2020-01-30^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102071599-B1 |
| titleOfInvention |
High selectivity Silicon Nitride Etchant composition |
| abstract |
The present invention relates to an etching composition for a silicon nitride film, which is used to etch away a silicon nitride film in a semiconductor process, and wherein the etching rate of the silicon nitride film is higher than that of a silicon oxide film in a high temperature etching process. It relates to a composition for high selectivity etching. According to the present invention, the high selectivity etching composition is a silicon nitride film and the silicon oxide film of the silicon oxide film is selectively etched at a high selectivity at the same time to minimize the damage and etching rate on the silicon oxide film and insoluble silicon compound by silicon nitride film etching Minimize creation |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111925803-A |
| priorityDate |
2018-02-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |