| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2014-11-19^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-12-29^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2020-12-29^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102195954-B1 |
| titleOfInvention |
Sulfur-containing thin films |
| abstract |
In some aspects, a method of forming a thin metal sulfide film is provided. According to some methods, a thin metal sulfide film is deposited on a substrate in a reaction space in a cyclic process comprising contacting the substrate with a first vapor phase metal reactant and a second vapor phase sulfur reactant in at least one cycle alternately and sequentially. In some aspects, a method of forming a three-dimensional structure on a substrate surface is provided. In some embodiments, the method includes forming a thin metal sulfide film over the substrate surface and forming a capping layer over the thin metal sulfide film. The substrate surface may include high mobility channels. |
| priorityDate |
2013-12-18^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |