| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2012-10-17^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-03-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-03-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102223704-B1 |
| titleOfInvention |
Process chamber for etching low k and other dielectric films |
| abstract |
Methods and process chambers for etching low-k dielectric films and other dielectric films are described. For example, the method includes modifying portions of the low-k dielectric layer using a plasma process. The modified portions of the low-k dielectric layer are selectively etched over the unmodified portions of the low-k dielectric layer and the mask layer. Etch chambers having multiple chamber regions for alternately generating separate plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux for the workpiece in one mode of operation, while providing a reactive species flux without significant ion flux to the workpiece in another mode of operation. A secondary plasma source is provided. The controller operates to cycle the operating modes repeatedly over time to remove the required accumulation of dielectric material. |
| priorityDate |
2011-10-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |