| abstract |
The present invention relates to a silicon carbide-based composite including a SiC crystal phase and a B 4 C crystal phase, exhibiting a relative density higher than 92%, and having a specific resistance lower than 30 Ω·cm, and a method for producing the same. According to the silicon carbide-based composite of the present invention, the difference in electrical resistance according to the location of the material is not large, shows low electrical resistance, and is excellent in thermal conduction and mechanical properties. |