| abstract |
In order to manufacture an integrated circuit device, a SiOCN material layer is formed on an active region of a substrate using a precursor having a bond between Si atoms and C atoms. A portion of the active region is etched to form a recess in the active region. The surface of the recess is baked at 700 to 800° C. under a hydrogen (H 2 ) atmosphere, and the SiOCN material film is exposed to the baking atmosphere while baking under the hydrogen atmosphere. A semiconductor layer is grown from the surface of the recess baked under the hydrogen atmosphere. |