| abstract |
An apparatus and method for processing a substrate according to a PECVD process are described. To change the deposition rate profile across the substrate, the temperature profile of the substrate is adjusted. To vary the deposition rate profile across the substrate, the plasma density profile is adjusted. Chamber surfaces exposed to plasma are heated to reduce the formation of low quality depositions on chamber surfaces and to improve plasma density uniformity. In situ instrumentation can be used to monitor the progress of the deposition process and to trigger control actions involving the substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants. have. |