http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102334328-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_75d69b060cefcbb8e550fa1013ea0c5e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0865 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0882 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate | 2020-05-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-12-02^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce8582fc23662090143319501f40dbdb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87d1535b29d9456854e38b2a8a81c2c9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d3135cde9aa87a8dabf302bdfdc412f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4ce60bf92cfcfb3ca19a2a2c72fedb8 |
| publicationDate | 2021-12-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102334328-B1 |
| titleOfInvention | Power semiconductor device and method of fabricating the same |
| abstract | A power semiconductor device according to an aspect of the present invention includes a semiconductor layer of silicon carbide (SiC), and at least one trench formed by recessing a predetermined depth into the semiconductor layer from the surface of the semiconductor layer and extending in one direction; , a gate insulating layer formed on at least an inner wall of the at least one trench; at least one gate electrode layer formed on the gate insulating layer to fill the at least one trench; and at least one side of the at least one gate electrode layer. a drift region formed in a semiconductor layer and having a first conductivity type; and at least one of the at least one gate electrode layer in contact with at least a portion of the drift region and at least one end of the at least one gate electrode layer to surround a bottom surface of the at least one gate electrode layer a well region formed in the semiconductor layer deeper than the gate electrode layer and having a second conductivity type; a source region formed in the well region and having a first conductivity type; and the at least one between the drift region and the source region at least one channel region having a second conductivity type, which is formed in a semiconductor layer on one side of the gate electrode layer of |
| priorityDate | 2020-05-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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