| abstract |
A semiconductor device is disclosed that includes a wire-bonded die stack in which bond wires skip dies within the die stack to provide bond wires having a long length. In one example, semiconductor dies are stacked on top of each other with offsets along two orthogonal axes such that the dies include odd-numbered dies that are staggered and interspersed with respect to even-numbered dies along only one of the axes. Wire-bonds may be formed between odd-numbered dies to skip even-numbered dies, and wire-bonds may be formed between even-numbered dies to skip odd-numbered dies. The long length of the bond wires increases the inductance of the wire-bonds relative to the parasitic capacitance of the semiconductor dies, thereby increasing the signal path bandwidth of the semiconductor device. |