| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-4846 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-373
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7393
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-296 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
| filingDate |
2020-07-13^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-05-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-05-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-102403966-B1 |
| titleOfInvention |
Igbt power semiconductor package with excellent coooling performance and manufacturing method thereof |
| abstract |
The power semiconductor package of the present invention includes a power semiconductor chip; a copper layer positioned under the power semiconductor chip; an epoxy insulating layer positioned under the copper layer; a metal base plate positioned under the epoxy insulating layer; and a heat sink positioned under the metal base plate, and the epoxy insulating layer may include a power semiconductor package made of an aminophenol-based epoxy resin. |
| priorityDate |
2020-07-13^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |