| abstract |
The present invention provides a substrate (11) comprising a monocrystalline material forming a growth surface (13); a plurality of intermediate portions (14) comprising an intermediate crystalline material epitaxially grown from the growth surface (13) and defining an upper intermediate surface (15); a plurality of defining nucleation surfaces 17, each comprised of a material comprising a transition metal forming a crystalline nucleation material, epitaxially grown from the upper intermediate surface 15, suitable for epitaxial growth of three-dimensional semiconductor devices. A nucleation structure (10) suitable for epitaxial growth of a three-dimensional semiconductor device (31), comprising a nucleation portion (16). |